Temperature dependence of excitonic emission in CuInSe2

Temperature dependence of excitonic radiative decay in CdSe quantum dots: the role of surface hole traps.

Using atomistic, semiempirical pseudopotential calculations, we show that if one assumes the simplest form of a surface state in a CdSe nanocrystal--an unpassivated surface anion site--one can explain theoretically several puzzling aspects regarding the observed temperature dependence of the radiative decay of excitons. In particular, our calculations show that the presence of surface states le...

Two-dimensional excitonic emission in InAs submonolayers.

Photoluminescence ~PL! and time-resolved photoluminescence ~TRPL! were used to study optical emissions of ultrathin InAs layers with average layer thickness ranging from 1 12 to 1 ML grown on GaAs substrates. We have found that the inhomogeneous broadening of the PL from InAs layers can be well described by the quantum-well model with InAs islands coupling to each other and being regarded as a ...

Effect of temperature on isotopic mass dependence of excitonic band gaps in semiconductors: ZnO

Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaNÕGaN quantum wells studied with cathodoluminescence

We have examined in detail the optical properties of InGaN quantum wells ~QWs! grown on pyramidal GaN mesas prepared by lateral epitaxial overgrowth ~LEO! in a metalorganic chemical vapor deposition system that resulted in QWs on $1-101% facets. The effects of In migration during growth on the resulting QW thickness and composition were examined with transmission electron microscopy ~TEM! and v...

Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence